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Preliminary: Subject to change without notice
WIRELESS COMMUNICATIONS DIVISION
VCTRL1 VCC1 GND
TQM7136
DATA SHEET
Bias Control
RFIN
Match
Match
RFOUT
3V HBT SiGe CDMA POWER AMPLIFIER MODULE
VREF VCTRL2
VCC2
Features
High Efficiency Three quiescent current states CMOS compatible logic inputs Excellent ACP and ALT Small 8 pin 6x6mm module Internally matched input and output Full ESD Protection Low leakage current
Product Description:
The TQM7136 is a 3V, 2 stage SiGe HBT Power Amplifier Module designed for use in mobile phones. Its RF performance meets the requirements for products designed to IS-95/98 standards. The quiescent current of the TQM7136 is set by the base-band processor using two CMOS compatible ICQ control voltages (VCTRL1 and VCTRL2). Overall current consumption of the device is minimized by selecting the lowest ICQ state available for each power output level. RF input and output matching is included within the module; therefore, minimal external circuitry is required. The TQM7136 gives excellent RF performance with low current consumption resulting in longer talk times in portable applications. The small 6mm square surface mount package is ideal for new generation small and light phones.
Electrical Specifications:
Parameter Frequency CDMA mode Pout1 CDMA Mode Efficiency1 Power2 Min 824 28 36 31.5 51 Typ Max 849 Units MHz dBm % dBm %
Applications
Cellular Band CDMA IS-95/98 based mobile phones. Single-Mode, Dual Mode, and Tri Mode CDMA/AMPS phones
AMPS Mode Output AMPS Mode
Efficiency2
Note 1: Test Conditions CDMA Mode: VCC1=3.4VDC, VCC2=3.4VDC, VREF =2.85VDC, VCTRL1=1.7VDC, VCTRL2 =1.7VDC, Tc=25C, Pout = 28.0dBm Note 2: Test Conditions AMPS Mode: VCC1=3.4VDC, VCC2=3.4VDC, VREF=2.85VDC, VCTRL1=1.7VDC, VCTRL2=1.7VDC, Tc=25C, Pout=31.5dBm
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1
TQM7136 - Preliminary Data Sheet
Absolute Maximum Ratings
Symbol VCC1, VCC2 VREF, VCTRL1, and VCTRL2 PDISS TC TSTG RFIN RFOUT Power Dissipation Case Temperature, Survival Storage Temperature DC Grounded RF input, 50ohm RF impedance DC Blocked RF output, 50 ohm RF impedance 2.5 -40 to +100 -40 to +150 0 to 0V -20V to 20V W C C VDC VDC Parameter Power Supply Voltage, no RF Applied RF Applied Bias reference voltages (VREF) and bias control voltage (VCTRL1 and VCTRL2). Absolute Maximum Value -0.5 to 6.0 -0.5 to 5.0 -0.5 to 5.0 VDC VDC Units
Note: The part may not survive all maximums applied simultaneously.
CDMA Mode Electrical Characteristics1,2,3
Parameter RF Frequency Pout, ICQ-hi Large Signal Gain, ICQ-hi Large Signal Gain, ICQ-mid Large Signal Gain, ICQ-low Gain Variation vs. Temp. Quiescent Current, ICQ-hi Quiescent Current, ICQ-hi Quiescent Current, ICQ-low Icc Power Added Efficiency Adjacent Channel Power (ACP) Alternate Channel Power (ALT) Output Power Mid-Power Icq state Output Power Low-Power Icq state VCTRL1=high, VCTRL2=high Pout = 28dBm, VCTRL1=high, VCTRL2=high Pout = 12dBm, VCTRL1=high, VCTRL2=low Pout = -0.5dBm, VCTRL1=low, VCTRL2=low -30 to 85 C, Pout=28dBm VCTRL1=high, VCTRL2=high VCTRL1=high, VCTRL2=low VCTRL1=low, VCTRL2=low Pout=28dBm, VCTRL1=high, VCTRL2=high Pout = 28dBm, VCTRL1=high, VCTRL2=high Pout = 28dBm, VCTRL1=high, VCTRL2=high, IS-95 Standard Pout = 28dBm, VCTRL1=high, VCTRL2=high, IS-95 Standard ACPR=-49dBc, VCTRL1=high, VCTRL2=low, IS-95 Standard ACPR=-50dBc, VCTRL1=high, VCTRL2=low, IS-95 Standard -0.5 dBm 12 dBm -57 -55 dBc 33 26 25 Conditions Min. 824 28 29 28 21 +/-1.4 118 65 25 503 36 -49 -44 135 80 35 Typ/Nom Max. 849 Units MHz dBm dB dB dB dB mA mA mA mA % dBc
2
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Preliminary - TQM7136
CDMA Mode Electrical Characteristics1,2,3 (cont'd)
Noise Power in Rx band Input VSWR Second Harmonic Third Harmonic Recommended Supply Voltage Reference Voltage VREF Current, ICQ-hi VREF Current, ICQ-mid VREF Current, ICQ-lo Leakage Current Logic Current (VCTRL1, VCTRL2) Logic Voltage (VCTRL1, VCTRL2) Recommended Operating Temperature Ruggedness Stability No Damage, Pout=+28dBm, VCTRL1=high, VCTRL2=high, IS-95 Standard No Oscillations, Pout=+28dBm, VCTRL1=high, VCTRL2=high, IS-95 Standard
Note 1: Test Conditions: VCC1=3.4VDC, VCC2=3.4VDC, VREF=2.85VDC, VCTRL1=2.00VDC, VCTRL2=2.00VDC, RF=836 MHz, TC = 25C unless otherwise specified. Note 2: Min./Max. limits are at +25C case temperature unless otherwise specified. Note 3: TriQuint Test Board.
Pout=28dBm, VCTRL1=high, VCTRL2=high, IS-95 Standard Both ICQ-hi & ICQ-mid Pout=+28dBm, VCTRL1=high, VCTRL2=high, IS-95 Standard Pout=+28dBm, VCTRL1=high, VCTRL2=high, IS-95 Standard 3.1 2.8 Hi-Power Mode, VCTRL1=high, VCTRL2=high Mid-Power Mode, VCTRL1=high, VCTRL2=low Mid-Power Mode, VCTRL1=low, VCTRL2=low VCTRL1=low, VCTRL2=low, VREF=0VDC
-94 1.6:1 -35 -45 3.4 2.85 10 5 2 10 100 4.2 2.9
dBm/30KHz
dBc dBc VDC VDC mA mA mA A A VDC VDC
High Low
1.7 0 -30
2.0 0.25
4.5 0.5 +85C 10:1 10:1
AMPS Mode Electrical Characteristics1,2,3
Parameter RF Frequency Pout, Saturated Large Signal Gain Power Added Efficiency Receive Band Noise Power Input VSWR Pin = +3.5dBm Pout = 31.5 dBm, Pin=3.5dBm Pout = 31.5 dBm, Pin=3.5dBm BW=30KHz, f=Tx+45MHz All Operating Pout and Vcc 24.5 47 Conditions Min. 824 31.5 27 51 -93 1.6:1 Typ/Nom Max. 849 Units MHz dBm dB % dBm/30KHz
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3
TQM7136 - Preliminary Data Sheet
AMPS Mode Electrical Characteristics1,2,3 (cont'd)
2nd Harmonic 3rd Icc Harmonic Pout = 31.5 dBm Pout = 31.5 dBm Pout = 31.5 dBm -32.5 -42.5 783 dBc dBc mA
Note 1: Test Conditions: VCC1=3.4VDC, VCC2=3.4VDC, VREF=2.85, VCTRL1=1.7VDC, VCTRL2=1.7VDC, RF=836MHz, TC = 25C unless otherwise specified. Note 2: Min./Max. limits are at +25C case temperature unless otherwise specified. Note 3: TriQuint Test Board.
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Preliminary - TQM7136
Typical Performance, CDMA High Power Mode:
Test Conditions (Unless Otherwise Specified): VCC1=3.4VDC, VCC2=3.4VDC, VCTRL1=1.7VDC, VCTRL2=1.7VDC, VREF=2.85VDC, POUT=28.0dBm, Tc=+25C.
Efficiency vs. Temp. - High Power Mode 45 45
Efficiency vs. Vcc - High Power Mode
40 PAE (%) PAE (%)
40
35
-30C 25C 85C
35
3.1V 3.4V 4.2V
30
30
25 824 836.5 Frequency (MHz) 849
25 824 836.5 Frequency (MHz) ACPR vs. Vcc. - High Power Mode -41
-30C 25C 85C 3.1V 3.4V 4.2V
849
ACPR vs. Temp. - High Power Mode -41 -43 -45 ACPR (dBc) -47 -49 -51 -53 -55 824 836.5 Frequency (MHz) 849
-43 -45 ACPR (dBc) -47 -49 -51 -53 -55 824 836.5 Frequency (MHz) Alt vs. Vcc. - High Power Mode -54
849
Alt vs. Temp. - High Power Mode -54
-56 Alt (dBc) Alt (dBc)
3.1V 3.4V 4.2V
-56
-58
-30C 25C 85C
-58
-60 824 836.5 Frequency (MHz) 849
-60 824 836.5 Frequency (MHz) 849
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5
TQM7136-Preliminary Data Sheet
Typical Performance, CDMA High Power Mode (cont'd):
Large Signal Gain vs. Temp. - High Power Mode 32 32 Large Signal Gain vs. Vcc - High Power Mode
30 Gain (dB) Gain (dB)
30
28
-30C 25C 85C
28
3.1V 3.4V 4.2V
26 824 836.5 Frequency (MHz) 849
26 824 836.5 Frequency (MHz) 849
Icc Quiescent Current - High Power Mode 125 120 Icc (mA) 115 110 105 100 3.1 3.4 Vcc (V) 4.2
-30C 25C 85C
6
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Preliminary - TQM7136 Data Sheet
Typical Performance, CDMA Mid Power Mode:
Test Conditions (Unless Otherwise Specified): VCC1=3.4VDC, VCC2=3.4VDC, VCTRL1=1.7VDC, VCTRL2=0.5VDC, VREF=2.85VDC, POUT=12.0dBm, Tc=+25C.
ACPR vs. Temp. - Mid Power Mode -47 -47 ACPR vs. Vcc. - Mid Power Mode
ACPR (dBc)
ACPR (dBc)
-49
-30C 25C 85C
-49
3.1V 3.4V 4.2V
-51 824 836.5 Frequency (MHz) 849
-51 824 836.5 Frequency (MHz) 849
Alt vs. Temp. - Mid Power Mode -66 -66
Alt vs. Vcc. - Mid Power Mode
Alt (dBc)
-68
Alt (dBc)
-68
3.1V 3.4V 4.2V
-30C 25C 85C
-70 824 836.5 Frequency (MHz) 849
-70 824 836.5 Frequency (MHz) 849
Large Signal Gain vs. Temp. - Mid Power Mode 30 30
Large Signal Gain vs. Vcc - Mid Power Mode
Gain (dB)
Gain (dB)
28
-30C 25C 85C
28
3.1V 3.4V 4.2V
26 824 836.5 Frequency (MHz) 849
26 824 836.5 Frequency (MHz) 849
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7
TQM7136-Preliminary Data Sheet
Typical Performance, CDMA Mid Power Mode (cont'd):
Icc Quiescent Current - Mid Power Mode 75 70 Icc (mA) 65 60 55 3.1 3.4 Vcc (V) 4.2
-30C 25C 85C
Typical Performance, CDMA Low Power Mode:
Test Conditions (Unless Otherwise Specified): VCC1=3.4VDC, VCC2=3.4VDC, VCTRL1=0.5VDC, VCTRL2=0.5VDC, VREF=2.85VDC, POUT=-0.5dBm, Tc=+25C.
ACPR vs. Temp. - Low Power Mode -47 -48 ACPR (dBc) -49 -50 -51 -52 -53 824 836.5 Frequency (MHz) 849
-30C 25C 85C
ACPR vs. Vcc - Low Power Mode -47 -48 ACPR (dBc) -49 -50 -51 -52 -53 824 836.5 Frequency (MHz) 849
3.1V 3.4V 4.2V
Alt vs. Temp. - Low Power Mode -64 -64
Alt vs. Vcc - Low Power Mode
-65 Alt (dBc) Alt (dBc)
-65
-66
-30C 25C 85C
-66
3.1V 3.4V 4.2V
-67 824 836.5 Frequency (MHz) 849
-67 824 836.5 Frequency (MHz) 849
8
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Preliminary - TQM7136 Data Sheet
Typical Performance, CDMA Low Power Mode (cont'd):
Large Signal Gain vs. Temp. - Low Power Mode 22
-30C 25C 85C
Large Signal Gain vs. Vcc - Low Power Mode 22
3.1V 3.4V 4.2V
21 Gain (dB) Alt (dBc)
21
20
20
19 824 836.5 Frequency (MHz) 849
19 824 836.5 Frequency (MHz) 849
Icc Quiescent - Low Power Mode 30
Icc (mA)
25
-30C 25C 85C
20 3.1 3.4 Frequency (MHz) 4.2
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9
TQM7136-Preliminary Data Sheet
Typical Performance, AMPS Mode:
Test Conditions (Unless Otherwise Specified): VCC1=3.4VDC, VCC2=3.4VDC, VCTRL1=1.7VDC, VCTRL2=1.7VDC, VREF=2.85VDC, Pin=5dBm, Tc=+25C.
AMPS Efficiency vs. Temp. 56% 56%
3.1V 3.4V 4.2V
AMPS Efficiency vs. Vcc
54% PAE (%) PAE (%) 52%
-30C 25C 85C
54%
52%
50% 824 836.5 Frequency (MHz)
50% 849 824 836.5 Frequency (MHz) 849
AMPS Output Power vs. Temp. 34 34
AMPS Output Power vs. Vcc
Pout (dBm)
32
Pout (dBm)
-30C 25C 85C
32
30 824 836.5 Frequency (MHz) 849
30 824 836.5 Frequency (MHz)
3V 3.4V 4.2V
849
10
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Preliminary - TQM7136 Data Sheet
Application/Test Circuit:
VCC1 VCTRL1
C6 C2
C1
VCC1 VCTRL1 GND
RFin
TQM7136
J1
RFIN VREF VCTRL2 RFOUT VCC2
RFout
J2
C4 C3 C5
C7
VREF VCTRL2 VCC2
US Cellular Band, 824 - 849 MHz Bill of Material for TQM7136 Power Amplifier Module Application/Test Circuit*
Component Power Amplifier Module RF Connector Capacitor Capacitor Reference Designator J1, J2 C1, C2, C3, C4, C5 Part Number TQM7136 0.1F 10F Value, Cellular Band Size 8pin/6mm square 0402 1210
C6, C7 *May vary due to printed circuit board layout and material
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11
TQM7136-Preliminary Data Sheet
Product Description:
The TQM71356 is a two stage SiGe HBT power amplifier module in a cascade configuration intended for use in CDMA Cellular band handsets. distortion at the output of the power amplifier. If the power amplifier has a quiescent current of 100 mA and a peak current demand in excess of 1 amp, it is possible to see 900 mA change in the current required from VCC as the modulated signal moves from one extreme to the other. If the power supply source impedance were 1 ohm, the resulting voltage ripple would be 0.9 volts which would cause the amplifier to fail it ACP requirements. Generally, the power supply source impedance should be kept as low as possible, preferably below 0.1 ohms total. Most battery technologies used in cellular telephones will support a low source impedance, but it may be necessary to supplement this in some designs with an low ESR capacitor. Ceramic or tantalum capacitors of approximately 10 micro-farads work well for this requirement. The application circuit includes 0.1 F capacitors at each of the PA control lines and VCC lines to ensure proper RF bypassing. Depending on the phone board layout and circuit bypassing in other areas of the phone, some of these components may not be necessary. There are a number of VCO signals and IF signals used in a given phone design, so it is important to protect the PA module from interfering signals and to limit any interference coming from the PA itself. Care should be taken when removing any of the RF bypassing components. One final area of concern is with excessive bypassing. If too large a value of bypassing capacitor is used on any of the control lines, it could reduce the frequency response of that control line to the point where a specification failure could occur. Please be sure that the logic lines and regulated supply lines driving the power amplifier control lines are adequate to supply peak current requirements of the bypassing capacitors chosen on the control lines.
Operation
The operation modes of the TQM7136 are determined based on the setting of VCNTRL1, VCNTRL2, and VREF. The truth table below defines the operating mode. In addition, please refer to the test circuit above and the section on determining the input and output matching circuits below. VCNTRL1 and VCNTRL2 must be set to low with VREF is low (<0.7VDC) to prevent forward biasing the ESD diodes between VREF and the control lines (VCNTRL1 and VCNTRL2). Operating Mode High Power Mid Power Low Power Off VCNTRL1 High High Low Low VCNTRL2 High Low Low Low VREF >2.7VDC >2.7VDC >2.7VDC 0VDC
Application
The applications circuit for the TQM7136 is very simple since most of the critical components are included inside the module. There are several important considerations when using the module in a phone design. First of all, it is important that the source impedance of the VCC power supply be very low. This is because the high current demand during the modulation peaks of the CDMA waveform can introduce voltage ripple at the symbol rate that will introduce additional inter-modulation distortion or Adjacent Channel Power
12
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Preliminary -TQM7136 Data Sheet
Package Pinout:
VCTRL1 VCC1 1 8 7
Bias Control
GND
RFIN 2
Match
Match
RFOUT 6
3 VREF VCTRL2
Pin Descriptions:
Pin Name GND VCC1 RFIN Pin # Paddle 1 2
4
5 VCC2
Description and Usage (Equivalent Circuit) Device Ground and Heat Sink. Needs good thermal path to remove heat. Collector supply for input stage. RF input. The RF circuit is DC grounded. 50 Ohm RF impedance.
RFin
VREF VCTRL2 VCC2 RFOUT GND VCTRL1
3 4 5 6 7 8
Regulated supply for setting bias. Vref is set to 0VDC to power-off the TQM7136 CMOS compatible logic level to set bias level Collector supply for output stage. RF output. The RF circuit is DC blocked internally. 50 ohm RF impedance. Ground CMOS compatible logic level to set bias level.
TriQuint recommends use of several via holes to the backside ground under the Paddle.
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13
TQM7136-Preliminary Data Sheet
Recommended PC board layout to Accept 8 Pin Module Package:
J Pin 1 U K
D S N
CL
M L T E
Dimension D E J K L M N S T U
mm 6.35 6.35 1.17 1.03 0.95 1.17 1.60 3.06 3.20 1.60
in 0.250 0.250 0.046 0.040 0.037 0.046 0.063 0.120 0.126 0.063
Notes: 1 Only ground signal traces are allowed directly under the package 2 Primary dimensions are in millimeters alternate dimensions are in inches.
14
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Preliminary -TQM7136 Data Sheet
Package Type: 8 Pin Plastic Module Package
8 PIN 1 7
2
6
3 4 TOP VIEW
5
MOLD SUBSTRATE
SIDE VIEW
3
4
5
2
6
1
8
7
BOTTOM VIEW
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15
TQM7136-Preliminary Data Sheet
Package Type: 8 Pin Plastic Module Package (cont'd)
DESIGNATION DESCRIPTION A OVERALL HEIGHT A1 A2 D E J K L M P T S R Q E e1 Notes: 1. GND SOLDER MASK OPENING IS NOT CENTERED ON THE PACKAGE SUBSTRATE THICKNESS MOLD THICKNESS PACKAGE LENGTH PACKAGE WIDTH TERMINAL SOLDER MASK OPENING LENGTH (FOR ALL TERMINALS) TERMINAL SOLDER MASK OPENING WIDTH FOR TERMINAL 1, 3, 5, 7 TERMINAL SOLDER MASK OPENING WIDTH FOR TERMINAL 2, 4, 6, 8 DISTANCE BETWEEN METAL PAD AND SOLDER MASK DISTANCE BETWEEN METAL PAD AND PACKAGE EDGE GND SOLDER MASK OPENING LENGTH GND SOLDER MASK OPENING WIDTH DISTANCE BETWEEN MASK OPENING AND PACKAGE EDGE DISTANCE BETWEEN MASK OPENING AND PACKAGE EDGE TERMINAL PITCH FOR TERMINAL 3-4-5 AND 7-8-1 TERMINAL PITCH FOR TERMINAL 1-2-3 AND 5-6-7 NOTE 1.42 +/-0.09 mm 0.32 +/-0.05 mm 1.10 +/-0.05 mm 6.0 +/-0.1 mm 6.0 +/-0.1 mm 0.975 +/-0.035 mm 0.835 +/-0.035 mm 0.91 +/-0.035 mm 0.075 +/-0.02 mm 0.05 +/-0.02 mm 3.2 +/-0.1 mm 3.06 +/-0.1 mm 1.39 +/-0.2 mm 1.40 +/-0.2 mm 2.513 mm 2.583 mm 1 1 1 1
Additional Information
For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info_wireless@tqs.com Tel: (503) 615-9000 Fax: (503) 615-8902
For technical questions and additional information on specific applications: Email: info_wireless@tqs.com
The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems. Copyright (c) 2001 TriQuint Semiconductor, Inc. All rights reserved. Revision A, December 20, 2001
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